PMBFJ308 データシートの表示（PDF） - Philips Electronics
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PMBFJ308 Datasheet PDF : 12 Pages
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Philips Semiconductors
N-channel silicon field-effect transistors
Product specification
PMBFJ308; PMBFJ309;
PMBFJ310
4
handbook, halfpage
Crs
(pF)
3
MCD224
2
1
0
−10
−8
−6
−4
−2
0
VGS (V)
10
handbook, halfpage
Cis
(pF)
8
MCD223
6
4
2
0
−10
−8
−6
−4
−2
0
VGS (V)
VDS = 10 V; Tj = 25 °C.
Fig.13 Reverse transfer capacitance as a function
of gate-source voltage; typical values.
VDS = 10 V; Tj = 25 °C.
Fig.14 Input capacitance as a function of
gate-source voltage; typical values.
103
handbook, full pagewidth
ID
(µA)
102
MCD229
10
1
10−1
10−2
10−3
−2.5
−2
−1.5
−1
−0.5
0
VGS (V)
VDS = 10 V; Tj = 25 °C.
Fig.15 Drain current as a function of gate-source voltage; typical values.
1996 Sep 11
8
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