STB50NE08 データシートの表示（PDF） - STMicroelectronics
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STB50NE08 Datasheet PDF : 8 Pages
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STB50NE08
THERMAL DATA
Rt hj-ca se
Rth j -a m b
Rthc- si nk
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
1
62.5
0.5
300
oC/ W
oC/W
oC/ W
oC
AVALANCHE CHARACTERISTICS
S ymb ol
IAR
E AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR , VDD = 50 V)
Max Valu e
50
300
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
S ymb ol
V(BR)DSS
IDSS
IGSS
P a ra m et er
Test Conditions
Dr ain- sou rc e
Breakdown Voltage
ID = 250 µA VGS = 0
Zero G ate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
oC
Tc = 125
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Min.
80
Typ .
Max.
Unit
V
1
µA
10
µA
± 100 nA
ON (∗)
S ymb ol
V GS(th )
RDS( o n )
ID(o n)
P a ra m et er
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 25 A
Resistance
On St ate Drain Current VDS > ID(on) x RDS(on) max
VGS = 10 V
Min.
2
Typ .
3
Max.
4
Unit
V
0.020 0.024 mΩ
50
A
DYNAMIC
S ymb ol
gfs (∗)
Ciss
Coss
Crss
P a ra m et er
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID =25 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
20
Typ .
35
Max.
Unit
S
3850 5100 pF
480 650 pF
105 140 pF
2/8
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