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MC33264DM-5.0 データシートの表示(PDF) - ON Semiconductor

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MC33264DM-5.0 Datasheet PDF : 10 Pages
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MC33264
ELECTRICAL CHARACTERISTICS (continued) (Vin = 6.0 V, IO = 10 mA, CO = 1.0 μF, TJ = 25°C (Note 1), unless otherwise noted.)
CL = 100 μF
Characteristic
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46
NOTES: 1. Low duty pulse techniques are used during test to maintain junction temperature as close to ambient as possible.
2. Quiescent current is measured where the PNP pass transistor is in saturation. VCE = 0.5 V guarantees this condition.
3. Noise tests on the MC33264 are made with a 0.01 μF capacitor connected across Pins 8 and 5.
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