ES3AB - ES3JB
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.5 Typical Junction Capacitance
1000
ES3FB - ES3GB
100
Fig.6 Typical Reverse Characteristics
10.000
ES3FB - ES3GB
1.000
TJ=125°C
0.100
10
0.010
TJ=25°C
f=1.0MHz
Vsig=50mVp-p
1
1
10
REVERSE VOLTAGE (V)
0.001
100
10 20 30 40 50 60 70 80 90 100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig.7 Typical Forward Characteristics
100
ES3FB - ES3GB
10
TJ=125°C
1
TJ=25°C
0.1
0.4
Pulse width 300μs
1% duty cycle
0.6
0.8
1.0
1.2
1.4
1.6
FORWARD VOLTAGE (V)
5
Version:B1706