Z0103NA0,412 データシートの表示（PDF） - WeEn Semiconductors
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Z0103NA0,412 Datasheet PDF : 14 Pages
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WeEn Semiconductors
Z0103NA0
4Q Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
repetitive peak off-state
voltage
IT(RMS)
RMS on-state current
full sine wave; Tlead ≤ 45 °C; Fig. 1; Fig. 2;
Fig. 3
ITSM
non-repetitive peak on- full sine wave; Tj(init) = 25 °C; tp = 20 ms;
state current
Fig. 4; Fig. 5
I2t
dIT/dt
I2t for fusing
rate of rise of on-state
current
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms
tp = 10 ms; SIN
IG = 20 mA; T2+ G+
IG = 20 mA; T2+ G-
IGM
PGM
PG(AV)
Tstg
Tj
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
IG = 20 mA; T2- G-
IG = 20 mA; T2- G+
over any 20 ms period
1 .2
IT(RMS )
(A)
0 .8
003aac264
16
IT(RMS)
(A)
12
8
0 .4
4
Min Max Unit
-
800 V
-
1
A
-
12.5 A
-
13.8 A
-
0.78 A²s
-
50
A/µs
-
50
A/µs
-
50
A/µs
-
20
A/µs
-
1
A
-
2
W
-
0.1 W
-40 150 °C
-
125 °C
003a a f977
0
-50
0
50
100
150
Tle a d (°C )
Fig. 1. RMS on-state current as a function of lead
temperature; maximum values
0
10-2
10-1
1
10
surge duration (s)
f = 50 Hz; Tlead = 45 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
Z0103NA0
Product data sheet
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06 September 2019
© WeEn Semiconductors Co., Ltd. 2019. All rights reserved
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