2N7002K データシートの表示（PDF） - Jiangsu Yutai Electronics Co., Ltd
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2N7002K Datasheet PDF : 5 Pages
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MOSFET ELECTRICAL CHARACTERISTICS
Ta=25°C unless otherwise specified
Symbol Parameter
Condition
V(BR)DSS
IDSS
Drain-Source Breakdown Voltage
VGS=0V ID=250μA
Zero Gate Voltage Drain Current(TA=25℃) VDS=60V, VGS=0V
Zero Gate Voltage Drain Current(TA=125℃) VDS=50V, VGS=0V
IGSS
VGS(TH)
RDS(ON)
RDS(ON)
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance②
Drain-Source On-State Resistance②
Dynamic Electrical Characteristics
VGS=±20V, VDS=0V
VDS=VGS, ID=250μA
VGS=10V, ID=0.5A
VGS=4.5V, ID=0.3A
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
Switching Characteristics
VDS=30V, VGS=0V,
f=1MHz
VDS=30V
ID=0.5A,
VGS=10V
t d(on)
Turn on Delay Time
tr
Turn on Rise Time
t d(off)
Turn Off Delay Time
tf
Turn Off Fall Time
Source Drain Diode Characteristics
VDD=30V,
ID=0.3A,
RG=3.3Ω,
VGS=10V
ISD
Source drain current(Body Diode)
VSD
Forward on voltage②
Notes:
① Pulse width limited by maximum allowable junction temperature
②Pulse test ; Pulse width300s, duty cycle2%.
TA=25℃
Tj=25℃, ISD=0.5A,
VGS=0V
2N7002K
Min Typ Max Unit
60
--
--
V
--
--
1
μA
--
--
100 uA
--
--
±10 uA
1.0 1.6 2.5
V
--
0.9
2
Ω
--
1.4
3
Ω
--
23.8
--
pF
--
3.9
--
pF
--
1.5
--
pF
--
0.93
--
nC
--
0.18
--
nC
--
0.31
--
nC
--
6
--
ns
--
3.5
--
ns
-
20
--
ns
--
5.9
--
ns
--
--
0.2
A
--
0.78 1.2
V
http://www.microdiode.com
Rev:2019A0
Page :2
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