2SC937 データシートの表示（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.

部品番号

コンポーネント説明

メーカー

2SC937

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

2SC937

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞

500

V

VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A

VBE(sat) Base-Emitter Saturation Voltage

IC= 2.5A; IB= 0.8A

ICBX

Collector Cutoff Current

VCB= 1200V; VEB= 1.5V

5.0

V

1.8

V

1

mA

IEBO

Emitter Cutoff Current

tf

Fall Time

VEB= 6V; IC= 0

IC= 2.5A, IB1= 0.8A, IB2= -1.1A;

LB= 10μH

0.2 mA

1.2 μs

SPTECH website：www.superic-tech.com

2

Share Link: