155N3LH6 データシートの表示（PDF） - STMicroelectronics

部品番号

コンポーネント説明

メーカー

155N3LH6

N-channel 30 V, 2.4 mΩ , 80 A, D²PAK, DPAK STripFET™VI DeepGATE™ Power MOSFET

STMicroelectronics 

STB155N3LH6, STD155N3LH6

Electrical characteristics

Figure 8.

VGS

(V)

12

10

Gate charge vs gate-source voltage Figure 9. Capacitance variations

VDD=15V

ID=80A

AM09106v1

C

(pF)

AM09107v1

Ciss

8

6

4

2

0

0

20

40

60

80

Qg(nC)

1000

Coss

Crss

100

0

5 10 15 20 25 VDS(V)

Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs

vs temperature

temperature

VGS(th)

(norm)

1.2

1.0

AM09108v1

RDS(on)

(norm)

2.0

1.8

1.6

VGS=10V

ID=40A

AM09109v1

0.8

1.4

0.6

1.2

1.0

0.4

0.8

0.2

0.6

0

-75 -25

25 75 125 TJ(°C)

0.4

-75 -25

25

75 125 TJ(°C)

Figure 12. Source-drain diode forward

characteristics

VSD

(V)

1.0

AM09110v1

TJ=-55°C

0.9

TJ=25°C

0.8

0.7

TJ=175°C

0.6

0.5

0.4

0 10 20 30 40 50 60 70 80 ISD(A)

Doc ID 17893 Rev 3

7/18

Share Link: