DS1251/DS1251P
4096K NV SRAM with Phantom Clock
POWER-DOWN/POWER-UP TIMING
PARAMETER
at VIH before Power-Down
Vcc Slew from VPF(max) to
VPF(min) ( at VPF)
Vcc Slew from VPF(min) to VSO
Vcc Slew from VPF(max) to
VPF(min) ( at VPF)
at VIH after Power-Up
SYMBOL
tPD
tF
tFB
tR
tREC
Over the operating range (3.3V)
MIN
TYP
MAX
0
300
UNITS
µs
µs
10
µs
0
µs
1.5
2.5
ms
NOTES
(TA=+25℃)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Expected Data Retention Time
tDR
10
years
9
Warning: Under no circumstances are negative undershoots of any amplitude allowed when device is in battery-backup mode.
MEMORY AC ELECTRICAL CHARACTERISTICS
PARAMETER
Read Cycle Time
Access Time
to Output Valid
to Output Valid
or
to Output Active
Output High-Z from Deselection
Output Hold from Address Change
Write Cycle Time
Write Pulse Width
Address Setup Time
Write Recovery Time
Output High-Z from
Output Active from
Data Setup Time
Data Hold Time from
SYMBOL
tRC
tACC
tOE
tCO
tCOE
tOD
tOH
tWC
tWP
tAW
tWR
tODW
tOEW
tDS
tDH
Over the operating range (3.3V)
DS1251W-120
MIN
MAX
UNITS
NOTES
120
ns
120
ns
60
ns
120
ns
5
ns
5
40
ns
5
5
ns
120
ns
90
ns
3
0
ns
20
ns
10
40
ns
5
5
ns
5
50
ns
4
20
ns
4
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9