GS8160Z18BT データシートの表示（PDF） - Giga Semiconductor
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GS8160Z18BT Datasheet PDF : 23 Pages
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Preliminary
GS8160Z18/36BT-250/200/150
Operating Currents
-250
-200
-150
Parameter
Test Conditions
Mode
Symbol
0
–40
0
–40
0
–40 Unit
to
to
to
to
to
to
70°C 85°C 70°C 85°C 70°C 85°C
Operating
Current
Device Selected;
All other inputs
≥VIH or ≤ VIL
Output open
Pipeline
(x32/
IDD
IDDQ
x36)
Flow Through
IDD
IDDQ
Pipeline
IDD
IDDQ
(x18)
Flow Through
IDD
IDDQ
290
40
300
40
240
30
250
30
190
20
200
20
mA
220
20
230
20
190
15
200
15
175
15
185
15
mA
260
20
270
20
215
15
225
15
170
15
180
15
mA
200
10
210
10
175
10
185
10
160
10
170
10
mA
Standby
Current
ZZ ≥ VDD – 0.2 V
Pipeline
ISB
—
Flow Through
ISB
40
50
40
50
40
50
mA
40
50
40
50
40
50
mA
Deselect
Current
Device Deselected;
All other inputs
≥ VIH or ≤ VIL
Pipeline
IDD
—
Flow Through
IDD
85
90
75
80
60
65
mA
60
65
50
55
50
55
mA
Notes:
1. IDD and IDDQ apply to any combination of VDD3, VDD2, VDDQ3, and VDDQ2 operation.
2. All parameters listed are worst case scenario.
Rev: 1.00 8/2004
17/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2004, GSI Technology
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