GS8160Z18BT データシートの表示（PDF） - Giga Semiconductor

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GS8160Z18BT

18Mb Pipelined and Flow Through Synchronous NBT SRAM

Giga Semiconductor 

DC Electrical Characteristics

Parameter

Input Leakage Current

(except mode pins)

ZZ Input Current

FT, SCD, ZQ Input Current

Output Leakage Current

Output High Voltage

Output High Voltage

Output Low Voltage

Symbol

IIL

IIN1

IIN2

IOL

VOH2

VOH3

VOL

Preliminary

GS8160Z18/36BT-250/200/150

Test Conditions

VIN = 0 to VDD

VDD ≥ VIN ≥ VIH

0 V ≤ VIN ≤ VIH

VDD ≥ VIN ≥ VIL

0 V ≤ VIN ≤ VIL

Output Disable, VOUT = 0 to VDD

IOH = –8 mA, VDDQ = 2.375 V

IOH = –8 mA, VDDQ = 3.135 V

IOL = 8 mA

Min

–1 uA

–1 uA

–1 uA

–100 uA

–1 uA

–1 uA

1.7 V

2.4 V

—

Max

1 uA

1 uA

100 uA

1 uA

1 uA

1 uA

—

—

0.4 V

Rev: 1.00 8/2004

16/23

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

© 2004, GSI Technology

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