BDT60AF データシートの表示（PDF） - New Jersey Semiconductor

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BDT60AF

Silicon PNP Darlington Power Transistors

New Jersey Semiconductor 

Jbe.mi-Conducto'i ^Products., (inc..

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

Silicon PNP Darlington Power Transistors BDT60F/AF/BF/CF

DESCRIPTION

• DC Current Gain -hFE= 750(Min)@ IC=-1.5A

• Collector-Emitter Sustaining Voltage-

: VCEo(sus) = -60V(Min)- BDT60F; -SOV(Min)- BDT60AF

-100V(Min)- BDT60BF; -120V(Min)- BDT60CF

• Complement to Type BDT61F/61AF/61BF/61CF

APPLICATIONS

• Designed for use in audio amplifier output stages , general

purpose amplifier and high speed switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25'C)

SYMBOL

PARAMETER

VALUE UNIT

BDT60F

-60

VCBO

Collector-Base

Voltage

BDT60AF

-80

V

BDT60BF

-100

BDT60CF

-120

BDT60F

-60

VCEO

Collector-Emitter

Voltage

BDT60AF

-80

V

BDT60BF

-100

BDT60CF

-120

VEBO Emitter-Base Voltage

-5

V

Ic

Collector Current-Continuous

-4

A

ICM

Collector Current-Pulse

-6

A

IB

Base Current

Collector Power Dissipation

PC

TC=25°C

Tj

Junction Temperature

-0.1

A

25

W

150

6C

Tstg

Storage Ttemperature Range

-65-150 'C

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance.Junction to Case

Onnlih/ S

MAX UNIT

5 °c/w

1.BA3E

2.COLLECTOR

3. EMITTER

TO-220Fa package

»# r

-*R'

mm

DIM WIN MAX

A 16.86 17.15

B 9.90 10.10

C 4.35 4.65

D 0.75 0.80

F 3JO 3.40

G 6.90 7.10

H 5.15 5.45

J 0.45 0.75

K 13.35 13.65

L 1.10 1JO

N 4.38 5.18

Q 4JS 5.15

R 2.95 3,25

J 2.70 2.90

U 1.75 2.05

V 1JO 1.SO

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