2N3767 データシートの表示（PDF） - Inchange Semiconductor
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2N3767 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N3767
DESCRIPTION
·Continuous Collector Current IC= 4A
·Collector Power Dissipation-
: PC= 20W @TC= 25℃
APPLICATIONS
·Designed for power amplifier and medium speed
applications.
switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
4
A
IB
Base Current-Continuous
2
A
PC
Collector Power Dissipation@TC=25℃
20
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
8.75
UNIT
℃/W
isc website：www.iscsemi.com
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