2N5786 データシートの表示（PDF） - New Jersey Semiconductor
部品番号
コンポーネント説明
メーカー
2N5786
New Jersey Semiconductor
2N5786 Datasheet PDF : 2 Pages
| |||
, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE; (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2N5781, 2N5782, 2N5783, 2N5784, 2N5785, 2N5786
Silicon N-P-N and P-N-P Epitaxial-Base
Complementary-Symmetry Transistors
General-Purpose Types for Switching and
Linear-Amplifier Applications
Feature*:
• Low saturation voltages
• Maximum safe-area-ol-operation curves
• High gain at high current
• High breakdown voltages
The 2N5781. 2N5782, and 2N5783 are epitaxial-base silicon
p-n-p transistors —complements ot the silicon n-p-n types
2N5784, 2N5785. and 2N5786-, respectively.
The three types in each family differ primarily in voltage
ratings and saturation characteristics.
These transistors are intended for medium-power switching
and complementary-symmetry audio amplifier applications.
All types are supplied in the JEDEC TO-205AD package.
TERMINAL DESIGNATIONS
JEDEC TO-205AD
MAXIMUM RATINGS, Absolute-Maximum Values:
P-N-P
N-P-N
•COLLECTOR TO BASE VOLTAGE
COLLECTOR-TO-EMITTER SUSTAINING VOLTAGE:
* With external base-to-emitter
resistance (RBE) = 100 O
With base open
*EMITTER-TO-BASE VOLTAGE
•CONTINUOUS COLLECTOR CURRENT
'CONTINUOUS BASE CURRENT
•TRANSISTOR DISSIPATION:
Q
At case temperatures up to 25 C
At ambient temperatures up to 25 C
o
At case temperatures above 25 C
Derate linearly
At ambient temperatures above 2S°C
Derate linearly
*TEMPERATURE PANGE:
Storage and operating (Junction)
"LEAD TEMPERATURE (During soldering):
At dittance > 1/32 in. (0.8 mm)from seating plane
for 10s max.
'CBO
'CER (sus)
VCEO(sus)
VEBO
2N5781*
2N5784
80
2N5782*
2N5785
65
2N5783*
2N57S6
45
80
65
45
65
50
40
5
5
3.5
3.5
3.5
3.5
1
1
1
10
10
10
1
1
1
0.057 W/ C,or see Fig. 7.
0.0057
-65 to +200
230
V
V
V
A
A
W
W
W/°C
°C
Quality Semi-Conductors
Share Link: 