2N6687 データシートの表示（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.

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2N6687

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 180V(Min.)

·Fast Switching Speed

·Low Collector Saturation Voltage-

: VCE(sat)= 1.5V(Max.)@ IC= 25A

APPLICATIONS

·Designed for converters, inverters, pulse-width- modulated

regulators and a variety of power switching circuits.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

VCEV

Collector-Emitter Voltage

280

V

VCEX

Collector-Emitter Voltage

230

V

VCEO Collector-Emitter Voltage

180

V

VEBO

Emitter-Base Voltage

8

V

IC

Collector Current-Continuous

25

A

ICM

Collector Current-Peak

50

A

IB

Base Current-Continuous

8

A

PC

Collector Power Dissipation@TC=25℃ 200

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-65~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance,Junction to Case

MAX

0.875

UNIT

℃/W

SPTECH website：www.superic-tech.com

2N6687

1

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