AOT16N50 データシートの表示（PDF） - Alpha and Omega Semiconductor

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AOT16N50

500V, 16A N-Channel MOSFET

Alpha and Omega Semiconductor 

AOT16N50/AOTF16N50

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min Typ Max Units

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

ID=250µA, VGS=0V, TJ=25°C

ID=250µA, VGS=0V, TJ=150°C

500

600

V

BVDSS

/∆TJ

Zero Gate Voltage Drain Current

ID=250µA, VGS=0V

0.5

V/ oC

IDSS

IGSS

VGS(th)

RDS(ON)

gFS

VSD

IS

ISM

Zero Gate Voltage Drain Current

VDS=500V, VGS=0V

VDS=400V, TJ=125°C

Gate-Body leakage current

VDS=0V, VGS=±30V

Gate Threshold Voltage

VDS=5V, ID=250µA

Static Drain-Source On-Resistance VGS=10V, ID=8A

Forward Transconductance

VDS=40V, ID=8A

Diode Forward Voltage

IS=1A,VGS=0V

Maximum Body-Diode Continuous Current

Maximum Body-Diode Pulsed Current

1

µA

10

±100 nΑ

3.3

4

4.5

V

0.29 0.37 Ω

20

S

0.71 1

V

16

A

64

A

DYNAMIC PARAMETERS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=25V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

1531 1914 2297 pF

153 191 229 pF

11

16

20

pF

1.75 3.5 5.3

Ω

SWITCHING PARAMETERS

Qg

Total Gate Charge

Qgs

Gate Source Charge

VGS=10V, VDS=400V, ID=16A

Qgd

Gate Drain Charge

tD(on)

Turn-On DelayTime

tr

tD(off)

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=250V, ID=16A,

RG=25Ω

tf

Turn-Off Fall Time

trr

Body Diode Reverse Recovery Time IF=16A,dI/dt=100A/µs,VDS=100V

Qrr

Body Diode Reverse Recovery Charge IF=16A,dI/dt=100A/µs,VDS=100V

34 42.8 51 nC

7.5 9.3 11 nC

16 20.3 24 nC

44

ns

84

ns

92

ns

50

ns

265 334 400 ns

4.5

6

7.5 µC

A. The value of R θJA is measured with the device in a still air environment with T A =25°C.

B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ

=25°C.

D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a

maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.

G. L=60mH, IAS=6A, VDD=150V, RG=25Ω, Starting TJ=25°C

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev3: Jul 2011

www.aosmd.com

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