UPA102P データシートの表示（PDF） - NEC => Renesas Technology
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UPA102P Datasheet PDF : 8 Pages
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µPA102
ELECTRICAL CHARACTERISTICS (Unless otherwise specified TA = +25 °C µPA102B, µPA102G common)
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN.
TYP.
MAX.
ICBO
Collector Cutoff Current at VCB = 5 V, IE = 0 (Q1, Q2, Q4, Q5)
µA
1.0
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0 (Q3, Q6)
µA
1.0
hFE
Direct Current Amplification at VCE = 3 V, IC = 1 mA (Q3, Q6)
40
100
250
hFE1/hFE2 Direct Current Amplification Ratio at VCE = 3 V, IC = 1 mA, (Q3, Q6)
0.9
1.0
1.1
CCB
Collector to Base Capacitance at VCB = 3 V, f = 1 MHz (Q1, Q2, Q4, Q5)
pF
0.9
1.8
CEB
Emitter to Base Capacitance at VEB = 0, f = 1 MHz (Q3, Q6)
pF
1.4
2.8
CCS
Collector/Substrate Capacitance at VCS = 3 V, f = 1 MHz (Q1, Q2, Q4, Q5)
pF
1.4
2.8
fT
Gain Bandwidth Product* at VCE = 3 V, IC = 10 mA
GHz
9.0
* Measured by installing a single transistor in a Micro-X package: the value shown is a reference value.
CONNECTION DIAGRAM (Top View)
µPA102B
µPA102G
14 13 12 11 10 9
8
SUB
Q6
Q1 Q2
Q4 Q5
Q3
SUB
1
2
3
4
5
6
7
14 13 12 11 10
SUB
Q1 Q2
9
8
Q6
Q3
Q4 Q5
SUB
1
2
3
4
5
6
7
TEST CIRCUIT SCHEMATIC* (For Electrical Characteristics Measurements excluding fT)
1 4 13 14
Q1
Q2
Q3
2
3
* See performance characteristics for voltage.
Data Sheet P10707EJ2V0DS00
3
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