2SC3494 データシートの表示（PDF） - Hitachi -> Renesas Electronics

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2SC3494

Silicon NPN Epitaxial Planar

Hitachi -> Renesas Electronics 

2SC3494

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

Unit

30

V

30

V

5

V

100

mA

300

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Collector to base breakdown

voltage

V(BR)CBO

30

Collector to emitter breakdown V(BR)CEO 30

voltage

Emitter to base breakdown

voltage

V(BR)EBO

5

Collector cutoff current

I CBO

—

Emitter cutoff current

I EBO

—

DC current transfer ratio

hFE*1

60

Base to emitter voltage

VBE

—

Collector to emitter saturation VCE(sat) —

voltage

Collector output capacitance Cob

—

Noise figure

NF

—

Typ

—

—

—

—

—

—

0.63

0.6

1.8

5.0

Power gain

PG

26

29

13

17

Note: 1. The 2SC3494 is grouped by hFE as follows.

B

C

60 to 120 100 to 200

Max

—

—

—

0.5

0.5

200

0.75

1.1

3.5

—

—

—

Unit

V

V

V

µA

µA

V

V

pF

dB

dB

Test conditions

IC = 10 µA, IE = 0

IC = 1 mA, RBE = ∞

IE = 10 µA, IC = 0

VCB = 18 V, IE = 0

VEB = 2 V, IC = 0

VCE = 12 V, IC = 2 mA

VCE = 12 V, IC = 2 mA

IC = 10 mA, IB = 1 mA

VCB = 10 V, IE = 0, f = 1 MHz

VCE = 6 V, IE = –1 mA,

f = 1 MHz, Rg = 500 Ω

VCE = 6 V, IE = –1 mA,

f = 10.7 MHz

VCE = 6 V, IE = –1 mA,

f = 100 MHz

See characteristic curves of 2SC460.

2

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