2SB816 データシートの表示（PDF） - SavantIC Semiconductor
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2SB816 Datasheet PDF : 4 Pages
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SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB816
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;RBE=;
V(BR)CBO Collector-base breakdown voltage
IC=-5mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-5mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A
VBE
Base-emitter on voltage
IC=-1A;VCE=-5V
ICBO
Collector cut-off current
VCB=-80V; IE=0
IEBO
Emitter cut-off current
VEB=-4V; IC=0
hFE-1
hFE-2
DC current gain
DC current gain
IC=-1A ; VCE=-5V
IC=-5A ; VCE=-5V
fT
Transition frequency
IC=-1A ; VCE=-5V
COB
Collector output capacitance
f=1MHz;VCB=-10V
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=-1.0A ;IB1=-IB2=-0.1A
VCC=20V;RL=20C
MIN TYP. MAX UNIT
-120
V
-150
V
-6
V
-1.0 -2.0
V
-1.5
V
-0.1 mA
-0.1 mA
60
200
20
15
MHz
220
pF
0.22
µs
0.93
µs
0.37
µs
hFE-1 Classifications
D
E
60-120
100-200
2
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