MJ10025 データシートの表示（PDF） - New Jersey Semiconductor

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MJ10025

SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE

New Jersey Semiconductor 

MJ10042, MJ10045, MJ10048

ELECTRICAL CHARACTERISTICS (Continued) (Tc = 25°C unless otherwise noted)

L

Characteristic

[ Symbol | rVlln | Max

ON CHARACTERISTICS (1)

MJ10042

DC Current Gain

(lc - 26 Adc. VCE = 5.0 Vdc)

(lC=2SAdc,Vce=IOVdc)

Collector-Emiuer Saturation Voltage

(lc= 25 Adc, %=2.0 Add

(lc = 37.6 Adc, IB = 7 6 Adc)

(lc = 2S Adc. IB = 2.0 Adc, TC • 1 00°C)

Base-Emitter Saturation Voltage

(1C* 25 Adc, lB = 2-OAdcl

(1C = 25 Adc. la = 2.0 Adc. Tc . 1 00°C)

hFE

35

-

40

VcElsat)

Vdc

2.0

-

6.0

2.5

vBE(5at)

Vdc

-

3.0

3.0

MJ10045

DC Current Gain

(lc = 60 Adc, Vce= 6.0 Vdc|

(lc=50Adc.VCEMOVdc>

Collector-Emitter Saturation Voltage

dC= 50 Adc. IB = 1.67 Ado)

«C = 75 Adc. IB = 6.0 Adc)

HC = 60 Adc. IB = 1 .67 Adc, Tq ^ 1 00°C)

Base-Emitter Saturation Voltage

dC = SOAdc, IB =1.67 Adc)

(lc = 60 Adc, IB - 1 .67 Adc, Tc = 1 00°C|

"FE

50

-

BO

VCE(68I)

--

Vdc

2.0

3.3

2.S

vBE(sat)

Vdc

-

3.0

3.0

MJ 10048

DC Current Gain

(lc = 1OO Adc, VCE - 5.0 Vdc)

(lc = ICO Adc, VCE = 10 Vdc)

--

Collector-Emitter Saturation Voltage

dC - 1 00 Adc, IB = 2.76 Adc)

HC = 1 00 Adc, IB = 2.76 Adc, Tc = 1 00°C)

Base-Emitter Saturation Voltage

«C= 100 Adc. IB = 2.76 Adc)

«C = 100 Ado, IB - 2.76 Adc, TC= 10O-C)

"FE

76

-

90

vCE(sat)

Vdc

-

2.0

2.6

VBEIsat)

Vdc

3.0

I

3.0

[1) Pulse T«ir Pulse width of 300 m. duty cycle •; 2 0%.

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