FQD2P25 データシートの表示（PDF） - Fairchild Semiconductor
部品番号
コンポーネント説明
メーカー
FQD2P25 Datasheet PDF : 9 Pages
| |||
Electrical CharacteristicsTC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
-250 --
∆BVDSS Breakdown Voltage Temperature
/ ∆TJ Coefficient
ID = -250 µA, Referenced to 25°C -- -0.2
IDSS
Zero Gate Voltage Drain Current
VDS = -250 V, VGS = 0 V
VDS = -200 V, TC = 125°C
--
--
--
--
IGSSF
Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V
--
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V
--
--
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = -250 µA
-3.0 --
VGS = -10 V, ID = -1.0 A
-- 3.15
VDS = -40 V, ID = -1.0 A (Note 4)
--
1.1
Dynamic Characteristics
Ciss
Coss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
-- 190
--
40
-- 6.5
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = -125 V, ID = -2.3 A,
RG = 25 Ω
-- 8.5
--
40
--
12
(Note 4, 5)
--
25
VDS = -200 V, ID = -2.3 A,
-- 6.5
VGS = -10 V
-- 1.8
(Note 4, 5)
--
3.0
--
--
-1
-10
-100
100
-5.0
4.0
--
250
55
8.5
25
90
35
60
8.5
--
--
V
V/°C
µA
µA
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
-2.0
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
-8.0
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -2.0 A
--
--
-5.0
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = -2.3 A,
-- 110
--
ns
dIF / dt = 100 A/µs
(Note 4)
--
0.4
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 48mH, IAS = -2.0A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD -2.3A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
©2000 Fairchild Semiconductor International
Rev. A, April 2000
Share Link: 