FJT44(2002) データシートの表示（PDF） - Fairchild Semiconductor

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FJT44
(Rev.:2002)

NPN Epitaxial Silicon Transistor

Fairchild Semiconductor 

High Voltage Transistor

FJT44

NPN Epitaxial Silicon Transistor

1 SOT-223

1.Base 2.Collector 3.Emitter

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Symbol

Parameter

VCBO

VCEO

VEBO

IC

PC

TJ

TSTG

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Dissipation (TC=25°C)

Junction Temperature

Storage Temperature

Value

500

400

6

300

2

150

-55 ~ 150

Units

V

V

V

mA

W

°C

°C

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol

BVCBO

BVCEO

BVEBO

ICBO

ICES

IEBO

hFE

Parameter

Collector-Base Breakdown Voltage

* Collector -Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Collector Cut-off Current

Emitter Cut-off Current

* DC Current Gain

VCE (sat) * Collector-Emitter Saturation Voltage

VBE (sat) * Base-Emitter Saturation Voltage

Cob

Output Capacitance

* Pulse Test: PW≤300µs, Duty Cycle≤2%

Test Condition

IC=100µA, IB=0

IC=1mA, IB=0

IE=100µA, IC=0

VCB=400V, IE=0

VCE=400V, IB=0

VEB=4V, IC=0

VCE=10V, IC=1mA

VCE=10V, IC=10mA

VCE=10V, IC=50mA

VCE=10V, IC=100mA

IC=1mA, IB=0.1mA

IC=10mA, IB=1mA

IC=50mA, IB=5mA

IC=10mA, IB=1mA

VCB=20V, IE=0, f=1MHz

Min.

500

400

6

40

50

45

40

Max.

0.1

0.5

0.1

200

Units

V

V

V

µA

µA

µA

0.4

V

0.5

V

0.75

V

0.75

V

7

pF

©2002 Fairchild Semiconductor Corporation

Rev. A3, August 2002

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