SM5006 series
5006AH series
VDD = 4.5 to 5.5V, VSS = 0V, Ta = −40 to 85°C unless otherwise noted.
Parameter
Symbol
Condition
Rating
Unit
min typ max
HIGH-level output voltage VOH Q: Measurement cct 1, VDD = 4.5V, IOH = 4mA
3.9
4.2
–
V
LOW-level output voltage
VOL Q: Measurement cct 2, VDD = 4.5V, IOL = 4mA
–
0.3
0.5
V
Output leakage current
IZ
Q: Measurement cct 2, INHN = LOW,
VDD = 5.5V
VOH = VDD
VOL = VSS
–
–
10
µA
–
–
10
HIGH-level input voltage
VIH INHN
2.0
–
–
V
LOW-level input voltage
VIL INHN
–
–
0.8
V
f = 30MHz
SM5006AHAS
CF5006AHA
–
15
30
Current consumption
f = 40MHz
SM5006AHBS
CF5006AHB
–
INHN = open,
Measurement cct 3,
f = 60MHz,
Ta = –20 to 80°C
CF5006AHC
–
IDD load cct 1,
VDD = 4.5 to 5.5V,
CL = 15pF
f = 60MHz,
Ta = –15 to 75°C
SM5006AHCS
–
f = 70MHz,
Ta = –20 to 80°C
CF5006AHD
–
18
36
25
50
mA
25
50
32
65
f = 70MHz,
Ta = –15 to 75°C
SM5006AHDS
–
32
65
INHN pull-up resistance
RUP Measurement cct 4
SM5006AHAS, CF5006AHA
50
–
150
kΩ
6.97 8.2 9.43
Feedback resistance
Rf Measurement cct 5
SM5006AHBS, CF5006AHB
SM5006AHCS, CF5006AHC
4.76 5.6 6.44
kΩ
4.16 4.9 5.64
SM5006AHDS, CF5006AHD
2.21 2.6 2.99
Built-in resistance
Built-in capacitance
RG Design value, determined by the Rf value
RD Design value, determined by the Rf value
CG Design value. A monitor pattern on a wafer is tested.
CD Design value. A monitor pattern on a wafer is tested.
17
20
23
Ω
17
20
23
7.44
8
8.56
pF
14.88 16 17.12
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