BSS 123
Power dissipation
Ptot = ƒ(TA)
0.40
W
Ptot 0.32
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0.00
0
20 40 60 80 100 120 °C 160
TA
Safe operating area ID=f(VDS)
parameter : D = 0.01, TC=25°C
Drain current
ID = ƒ(TA)
parameter: VGS ≥ 10 V
0.18
A
ID 0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0
20 40 60 80 100 120 °C 160
TA
Drain-source breakdown voltage
V(BR)DSS = ƒ(Tj)
Semiconductor Group
120
V
116
V
114
(BR)DSS
112
110
108
106
104
102
100
98
96
94
92
90
-60
-20
20
60
100 °C 160
Tj
5
Sep-13-1996