BSP 316
Power dissipation
Ptot = ƒ(TA)
2.0
W
Ptot
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 20 40 60 80 100 120 °C 160
TA
Safe operating area ID=f(VDS)
parameter : D = 0, TC=25°C
Drain current
ID = ƒ(TA)
parameter: VGS ≥ -10 V
-0.70
A
-0.60
ID -0.55
-0.50
-0.45
-0.40
-0.35
-0.30
-0.25
-0.20
-0.15
-0.10
-0.05
0.00
0
20 40 60 80 100 120 °C 160
TA
Transient thermal impedance
Zth JA = ƒ(tp)
parameter: D = tp / T
10 2
K/W
ZthJC
10 1
10 0
Semiconductor Group
10 -1
10 -2
10 -3
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 -4
10 -8
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2 10 -1s 10 0
tp
5
Sep-12-1996