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BB149,135 データシートの表示(PDF) - NXP Semiconductors.

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BB149,135
NXP
NXP Semiconductors. 
BB149,135 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
NXP Semiconductors
BB149
UHF variable capacitance diode
4. Marking
Table 3. Marking
Type number
BB149
Marking code
P9
5. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VR
reverse voltage
-
IF
forward current
-
Tstg
storage temperature
55
Tj
junction temperature
55
Max Unit
30
V
20
mA
+150 C
+125 C
6. Characteristics
Table 5. Characteristics
Tj = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
IR
reverse current see Figure 2
VR = 30 V
-
-
10
nA
VR = 30 V; Tj = 85 C
-
-
200 nA
rs
diode series
f = 470 MHz
resistance
[1] -
-
0.75
Cd
diode
f = 1 MHz; see Figure 1 and 3
capacitance
VR = 1 V
18
-
19.5 pF
VR = 28 V
1.9 2.1 2.25 pF
C-----d----1---V------ capacitance ratio f = 1 MHz
C d 28 V
8.2 9
10
C-----d----1---9---V---capacitance ratio f = 1 MHz
C d 28 V
1.2 -
-
----C----d-
capacitance
matching
VR = 0.5 V to 28 V; in a
sequence of 10 diodes
Cd
(gliding)
-
-
2
%
[1] VR is the value at which Cd = 9 pF.
BB149
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 5 September 2011
© NXP B.V. 2011. All rights reserved.
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