¡ Semiconductor
MSM7575
ELECTRICAL CHARACTERISTICS
DC and Digital Interface Characteristics
(VDD = 2.7 V to 3.6 V, Ta = –25°C to +70°C)
Parameter
Symbol
Condition
Min. Typ. Max. Unit
Power Supply Current
IDD1 Operating Mode, (VDD = 3.0 V) —
8
6
mA
IDD2 Power Down Mode, (VDD = 3.0 V) —
0.01
0.1 mA
Input High Voltage
VIH
—
0.45¥VDD —
VDD
V
Input Low Voltage
VIL
—
0.0
— 0.16¥VDD V
Input Leakage Current
IIH VI = VDD
IIL VI = 0 V
—
—
2.0 mA
—
—
0.5 mA
Output High Voltage
VOH
IOH = 0.4 mA
IOH = 1 mA
0.5 ¥ VDD —
0.8 ¥ VDD —
VDD
V
VDD
V
Output Low Voltage
VOL 1 LSTTL, Pull-up: 500 W
0.0
0.2
0.4
V
Output Leakage Current
IO PCMSO
—
—
10
mA
Input Capacitance
CIN
—
—
5
—
pF
Output Resistance
ROSG SG
—
25
50 kW
Transmit Analog Interface Characteristics
(VDD = 2.7 V to 3.6 V, Ta = –25°C to +70°C)
Parameter
Symbol
Condition
Min. Typ. Max. Unit
Input Resistance
RINX AIN1+ , AIN1– , AIN2
10
—
— MW
Output Load Resistance
RLGX GSX1, GSX2
20
—
—
kW
Output Load Capacitance
CLGX GSX1, GSX2
—
—
100 pF
Output Amplitude
VOGX GSX1, GSX2, RL = 20 kW
—
— 1.30 (*1) VPP
Input Offset Voltage
VOFGX Pre–OPAMPs
–20
—
20 mV
*1 –7.7 dBm (600 W) = 0 dBm0, + 3.17 dBm0 = 1.30 VPP (m-law Selected)
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