FDR844P データシートの表示（PDF） - Fairchild Semiconductor
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FDR844P Datasheet PDF : 5 Pages
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Typical Characteristics
5
ID = -10A
4
3
2
1
0
0
10
VDS = -5V
-15V
-10V
20
30
40
50
60
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
10µs
100µs
1ms
10ms
100ms
1s
VGS = -4.5V
DC
0.1
SINGLE PULSE
RθJA =135oC/W
TA = 25oC
0.01
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
6000
5000
CISS
f = 1 MHz
VGS = 0 V
4000
3000
2000
COSS
1000
CRSS
0
0
5
10
15
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
40
30
20
10
0
0.001
SINGLE PULSE
RθJA =135oC/W
TA = 25oC
0.01
0.1
1
10
100
SINGLE PULSE TIME (SEC)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA(t) = r(t) * RθJA
RθJA = 135 °C/W
P(pk)
t1
TJ - TA =t2P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
1000
FDR844P Rev A1(W)
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