FDD2670 データシートの表示（PDF） - Fairchild Semiconductor
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FDD2670 Datasheet PDF : 5 Pages
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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 1)
WDSS
Single Pulse Drain-Source
Avalanche Energy
VDD = 100 V,
IAR
Maximum Drain-Source Avalanche
Current
ID = 3.6 A
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate–Body Leakage, Forward
IGSSR
Gate–Body Leakage, Reverse
VGS = 0 V, ID = 250 µA
200
ID = 250 µA, Referenced to 25°C
VDS = 160 V,
VGS = 20 V,
VGS = –20 V,
VGS = 0 V
VDS = 0 V
VDS = 0 V
375 mJ
3.6
A
V
214
mV/°C
1
µA
100 NA
–100 NA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS
Forward Transconductance
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = VGS, ID = 250 µA
2
ID = 250 µA, Referenced to 25°C
VGS = 10 V,
ID = 3.6 A
VGS = 10 V, ID = 3.6 A TJ = 125°C
VGS = 10 V,
VDS = 5 V
20
VDS = 5 V,
ID = 3.6 A
4
4.5
V
-10
mV/°C
100 130 mΩ
205 275
A
15
S
VDS = 100 V,
f = 1.0 MHz
V GS = 0 V,
1228
PF
112
PF
17
pF
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
(Note 2)
VDD = 100 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
VDS = 100 V,
VGS = 10 V
ID = 3.6 A,
13 23
ns
8
16
ns
30 48
ns
25 40
ns
27 43
nC
7
nC
10
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 2.1 A (Note 2)
2.1
A
0.7 1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA= 40oC/W when
mounted on a 1in2 pad of
2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. ISD ≤ 3A, di/dt ≤ 100A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
b) RθJA= 96oC/W on a
minimum mounting pad.
FDD2670 Rev C1(W)
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