2N2102 データシートの表示（PDF） - Continental Device India Limited
部品番号
コンポーネント説明
メーカー
2N2102 Datasheet PDF : 4 Pages
| |||
NPN SILICON PLANAR TRANSISTOR
2N2102
TO-39
Metal Can Package
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Saturation Voltage *VCE (sat)
IC=150mA, IB=15mA
Base Emitter Saturation Voltage
*VBE (sat)
IC=150mA, IB=15mA
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Impedance
Noise Figure
fT
IC=50mA, VCE=10V, f=20MHz
Cobo
VCB=10V, IE=0, f=1MHz
Cibo
VEB=0.5V, IC=0, f=1MHz
hib
IC=1mA, VCE=5V, f=1KHz
IC=5mA, VCE=10V, f=1KHz
hrb
IC=1mA, VCE=5V, f=1KHz
IC=5mA, VCE=10V, f=1KHz
hfe
IC=1mA, VCE=5V, f=1KHz
IC=5mA, VCE=10V, f=1KHz
hob
IC=1mA, VCE=5V, f=1KHz
IC=5mA, VCE=10V, f=1KHz
IC=300µA, VCE=10V,
NF
f=1KHz,Bandwidth=1.0 Hz
RS=1kΩ
MIN
60
24
4.0
30
35
0.01
0.01
TYP MAX UNIT
0.5
V
1.1
V
MHz
15
pF
80
pF
34
Ω
8.0
Ω
3.0
x10 -4
3.0
x10 -4
100
150
0.5 µmho
1.0 µmho
6.0
dB
2N2102Rev_1 040904E
Continental Device India Limited
Data Sheet
Page 2 of 4
Share Link: 