SI2305DS データシートの表示（PDF） - KEXIN Industrial

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SI2305DS

P-Channel MOSFET

KEXIN Industrial 

SSMMDD TTyyppee

SI2305DS (KI2305DS)

MOSFET

■ Electrical Characteristics Ta = 25℃

Parameter

Drain-source breakdown voltage

Gate threshold voltage

Zero gate voltage drain current

Gate-body leakage

Drain-source on-state resistance

On-state drain current

Forward transconductance

Input capacitance *

Output capacitance *

Reverse transfer capacitance *

Total gate charge *

Gate-source charge *

Gate-drain charge *

Turn-on Delay time

Turn-on Reise time

Turn-off Dealy time

Turn-off Fall time

Continuous source current (diode conduction) *

Diode forward voltage

* Pulse test: PW ≤ 300 μs duty cycle ≤ 2%.

Symbol

Testconditions

VDSS VGS = 0 V, ID = -250μA

VGS(th) VDS = VGS, ID = -250 μA

VDS = -6.4 V, VGS = 0 V

IDSS

VDS = -6.4 V, VGS = 0 V, TJ = 55 ℃

IGSS VDS = 0 V, VGS = ±8 V

VGS = -4.5 V, ID = -3.5 A

rDS(on) VGS = -2.5 V, ID = -3.0 A

VGS = -1.8 V, ID = -2.0 A

ID(on)

VDS ≤ -5 V, VGS = -4.5 V

VDS ≤ -5 V, VGS = -2.5 V

gfs VDS = -5 V, ID = -3.5 A

Ciss

Coss VDS = -4V ,VGS = 0 , f = 1 MHz

Crss

Qg

Qgs VDS = -4V ,VGS = -4.5 V , ID= -3.5 A

Qgd

td(on)

tr

td(off)

VDD = -4V , RL = 4Ω ,

ID = -1A , VGEN =- 4.5V , RG = 6Ω

tf

IS

VSD IS = -1.6 A, VGS = 0 V

Min Typ Max Unit

-8

V

-0.45

-0.8 V

-1

μA

-10

±100 nA

0.044 0.052

0.060 0.071 Ω

0.087 0.108

-6

A

-3

8.5

S

1245

375

pF

210

10 15

2

nC

2

13 20

25 40

ns

55 80

19 35

-1.6

A

-1.2 V

■ Marking

Marking

A5*

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