IRLI510A データシートの表示（PDF） - Fairchild Semiconductor
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IRLI510A Datasheet PDF : 9 Pages
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IRLW/I510A
1&+$11(/
32:(5 026)(7
Electrical Characteristics (TC=25°C unless otherwise specified)
Symbol
BVDSS
∆BV/∆TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage 100 --
Breakdown Voltage Temp. Coeff. -- 0.1
-- V VGS=0V,ID=250µA
-- V/°C ID=250µA See Fig 7
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
1.0 -- 2.0 V VDS=5V,ID=250µA
-- -- 100 nA VGS=20V
-- -- -100
VGS=-20V
-- -- 10
VDS=100V
Drain-to-Source Leakage Current -- -- 100 µA VDS=80V,TC=150°C
Static Drain-Source
On-State Resistance
-- -- 0.44 Ω VGS=5V,ID=2.8A
(4)
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-- 3.2 --
VDS=40V,ID=2.8A (4)
-- 180 235
--
50 65
VGS=0V,VDS=25V,f =1MHz
pF
See Fig 5
-- 20 25
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
-- 8 25
-- 10 30
VDD=50V,ID=5.6A,
-- 17 45 ns RG=12Ω
See Fig 13 (4) (5)
-- 8 25
Total Gate Charge
Gate-Source Charge
Gate-Drain ( Miller ) Charge
-- 5.5 8
-- 0.9 --
-- 3.5 --
VDS=80V,VGS=5V,
nC ID=5.6A
See Fig 6 & Fig 12 (4) (5)
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
(1) --
-- 5.6
Integral reverse pn-diode
A
-- 20
in the MOSFET
(4) -- -- 1.5 V TJ=25°C,IS=5.6A,VGS=0V
-- 85 -- ns TJ=25°C,IF=5.6A
-- 0.23 -- µC diF/dt=100A/µs
(4)
Notes;
(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
(2) L=3mH, IAS=5.6A, VDD=25V, RG=27Ω, Starting TJ =25°C
(3) ISD ≤ 5.6A, di/dt ≤ 250A/µs, VDD ≤ BVDSS , Starting TJ =25°C
(4) Pulse Test: Pulse Width = 250µs, Duty Cycle ≤ 2%
(5) Essentially Independent of Operating Temperature
2
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