2SC2873 データシートの表示（PDF） - Foshan Blue Rocket Electronics Co.,Ltd.

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2SC2873

Silicon NPN transistor in a SOT-89 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

2SC2873

Rev.E Mar.-2016

DATA SHEET

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current-Continuous

Collector Base-Continuous

Collector Power Dissipation

Collector Power Dissipation*

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

*PC(Ta=25℃)

Tj

Tstg

*BR2SC2873 mounted on ceramic substrate(250mm2×0.8t)

数值

Rating

50

50

5.0

2.0

0.4

500

1000

150

-55～150

单位

Unit

V

V

V

A

A

mW

mW

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector Cut-Off Current

Emitter Base Cut-Off Current

Collector to Emitter Breakdown

Voltage

DC Current Gain

Collector to Emitter Saturation

Voltage

Emitter to Base Saturation Voltage

Transition Frequency

Collector Output Capacitance

Turn-OnTime

Storage Time

Fall Time

符号

Symbol

测试条件

Test Conditions

ICBO VCB=50V IE=0

IEBO VEB=5.0V IC=0

VCEO IC=10mA IB=0

hFE(1)

hFE(2)

VCE=2.0V

VCE=2.0V

IC=500mA

IC=2.0A

VCE(sat) IC=1.0A

IB=0.05A

VBE IC=1.0A

IB=0.05A

fT VCE=2.0V IC=500mA

Cob

VCB=10V

f=1MHz

IE=0

ton

tstg

VCC=30V

IB1=-IB2=0.05A

tf

最小值 典型值 最大值 单位

Min Typ Max Unit

0.1 μA

0.1 μA

50

V

70

240

20

0.5 V

1.2 V

120

MHz

30

pF

0.1

μS

1.0

μS

0.1

μS

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