2SB1161 データシートの表示（PDF） - New Jersey Semiconductor
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2SB1161 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
2SB1161
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VcE(sat) Collector-Emitter Saturation Voltage lc= -8A; IB= -0.8A
VeE(on) Base -Emitter On Voltage
lc= -8A; VCE= -5V
ICBO
Collector Cutoff Current
VCB=-160V; IE=0
-2.0 V
-1.8
V
-50 M A
IEBO
Emitter Cutoff Current
VEB= -3V;lc= 0
-50 M A
hpE-1 DC Current Gain
lc= -20mA; VCE= -5V
20
hFE-2
DC Current Gain
lc= -1A; VCE= -5V
60
200
hpE-3
DC Current Gain
lc= -8A; VGE= -5V
20
COB
Output Capacitance
IE= 0; VCB= -10V; ftest= 1.0MHz
420
PF
fi
Current-Gain—Bandwidth Product lc= -0.5A; VCE= -5V
20
MHz
hFE.2Classifications
Q
S
P
60-120 80-160 100-200
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