DF45114(2000) データシートの表示（PDF） - Dynex Semiconductor

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DF45114
(Rev.:2000)

Fast Recovery Diode

Dynex Semiconductor 

1000

100

10

IF

50µs

QS = ∫ 0

QS

Conditions:

Tj = 125˚C,

VR = 100V

tp = 1ms

dIR/dt

IRR

IF = 2000A

IF = 1000A

IF = 500A

IF = 200A

IF = 100A

DF451

1

1

1000

100

10

10

100

Rate of rise of reverse current, dIR/dt - (A/µs)

Fig.3 Recovered charge

1000

Conditions:

Tj = 125˚C,

VR = 100V

IF = 2000A

IF = 1000A

IF = 500A

IF = 100A

1

1

10

100

1000

Rate of rise of reverse current, dIR/dt - (A/µs)

Fig.4 Typical reverse recovery current vs rate of rise of forward current

5/8

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