BD808 データシートの表示（PDF） - New Jersey Semiconductor
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BD808 Datasheet PDF : 2 Pages
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^s.mi-Conducko'i iPioauati, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BD808
DESCRIPTION
• DC Current Gain -
:hFE=30@lc=-2A
• Collector-Emitter Sustaining Voltage-
: VCEo(sus)= -60V(Min)
• Complement to Type BD807
APPLICATIONS
• Designed for use in high power audio amplifiers utilizing
complementary or quasi complementary circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-70
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-10
A
IB
Base Current
Collector Power Dissipation
PC
@ TC=25'C
Tj
Junction Temperature
Tstg
Storage Temperature Range
-6
A
90
W
150
"C
-55-150
°c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.39 •c/w
-
MB^B|
^^^H
J
\S
1 —L
V
:j
, _I
i 23
PIN I.BASE
2. COLLECTOR
3, EMITTER
TO-220C package
- BH
Mi p
ij-\ZlxT'ftl
A
— J500
or » * JQQOV
4 H '',
Tj
K
f 1 frD
H G [*-
J
C
50&-'
i
•*
II
*-500
1
mm
DIIVI MIN UAY
A 15.70 15.90
B 9.90 10.10
C 4.20 4.40
D 0.70 0.90
F 3.40 3.60
G 4.98 5.18
H 2.70 2.90
j 044 046
K 13.20 13.40
L 1.10 1.30
Q 2.70 2.90
R 2.50 2.70
S 1.29 1.31
u 6.45 6.65
V 8.66 8.86
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