MGS05N60D データシートの表示（PDF） - ON Semiconductor
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MGS05N60D Datasheet PDF : 6 Pages
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MGS05N60D
150
100
Cies
15
TC = 25°C
VGE = 0 V
10
Coes
50
Cres
0
0
5
10
15
20
25
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
5
VCE = 300 V
VGE = 15 V
IC = 0.3 A
TC = 25°C
0
0
1
2
3
4
5
6
7
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate–To–Emitter Voltage versus
Total Charge
60
L = 3.0 mH
50 VCC = 300 V
40
VGE = 15 V
W RG = 25
m dV/dt = 1.0 kV/ s
30
TC = 125°C
20
25°C
10
0
0
0.5
1.0
1.5
2.0
IC, COLLECTOR CURRENT (AMPS)
Figure 9. Total Switching Losses versus
Collector Current
20
L = 3.0 mH
VCC = 300 V
15
VGE = 15 V
W RG = 25
m dV/dt = 1.0 kV/ s
10
5
IC = 0.7 A
0.3 A
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
Figure 10. Total Switching Losses versus
Case Temperature
2.5
2.0
1.5
1.0
TC = 125°C
0.5
W VGE = 15 V
RG = 25
L = 3.0 mH
0
0
100
200
300
400
500
600
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 11. Minimum Turn–Off
Safe Operating Area
4
Motorola IGBT Device Data
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