IRF730 データシートの表示（PDF） - Nell Semiconductor Co., Ltd
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IRF730 Datasheet PDF : 7 Pages
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SEMICONDUCTOR
IRF730 Series RRooHHSS
THERMAL RESISTANCE
SYMBOL
PARAMETER
Rth(j-c)
Thermal resistance, junction to case
Rth(c-s)
Thermal resistance, case to heatsink
Rth(j-a)
Thermal resistance, junction to ambient
Nell High Power Products
Min.
Typ.
0.50
Max.
1.7
62
UNIT
ºC/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min.
V(BR)DSS
Drain to source breakdown voltage
ID = 250µA ,VGS = 0V
400
▲ ▲ V(BR)DSS/ TJ Breakdown voltage temperature coefficient ID = 1mA, referenced to 25 °C
IDSS
Drain to source leakage current
VDS=400V, VGS=0V
VDS=320V, VGS=0V
TC = 25°C
TJ=125°C
IGSS
Gate to source forward leakage current
Gate to source reverse leakage current
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
RDS(ON)
Static drain to source on-state resistance VGS = 10V, ID = 3.3A (Note 1),
VGS(TH)
Gate threshold voltage
VGS=VDS, ID=250μA
2.0
gfs
Forward transconductance
VDS=50V, ID=3.3A,
3.1
CISS
Input capacitance
COSS
Output capacitance
VDS = 25V, VGS = 0V, f =1MHz
CRSS
Reverse transfer capacitance
td(ON)
Turn-on delay time
tr
td(OFF)
Rise time
Turn-off delay time
VDD = 200V, lD = 5.5A, RD = 57Ω,
VGS = 10V, RG =12Ω (Note 1)
tf
Fall time
LD
Internal drain inductance
LS
internal source inductance
Between lead, 6mm from
package and center of die
QG
Total gate charge
QGS
Gate to source charge
VDS = 320V, VGS = 10V, ID = 5.5A
QGD
Gate to drain charge (Miller charge)
Typ.
0.5
0.8
4.5
600
103
4
10
22
20
16
4.5
7.5
Max. UNIT
V
V/ºC
25
μA
250
100
nA
-100
1
Ω
4.5 V
S
pF
ns
nH
22
5.8 nC
9.3
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min. Typ. Max. UNIT
VSD
Diode forward voltage
ISD = 5.5A, VGS = 0V
1.6
V
Is (IsD)
Continuous source to drain current
Integral reverse P-N junction
5.5
diode in the MOSFET
D (Drain)
ISM
Pulsed source current
G
(Gate)
A
22
trr
Reverse recovery time
Qrr
Reverse recovery charge
tON
Forward turn-on time
S (Source)
IS = 5.5A, VGS = 0V,
dIF/dt = 100A/µs
370 550 ns
1.6 2.4 μC
Intrinsic turn-on time is negligible (turn-on is domonated by LS+LD)
Note: 1. Pulse test: Pulse width ≤ 300μs, duty cycle ≤ 2%.
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