2N5088G データシートの表示（PDF） - ON Semiconductor
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2N5088G Datasheet PDF : 5 Pages
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2N5088, 2N5089
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
Vdc
2N5088
30
−
2N5089
25
−
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
Vdc
2N5088
35
−
2N5089
30
−
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
(VCB = 15 Vdc, IE = 0)
Emitter Cutoff Current
(VEB(off) = 3.0 Vdc, IC = 0)
(VEB(off) = 4.5 Vdc, IC = 0)
ON CHARACTERISTICS
2N5088
2N5089
ICBO
IEBO
nAdc
−
50
−
50
nAdc
−
50
−
100
DC Current Gain
(IC = 100 mAdc, VCE = 5.0 Vdc)
hFE
2N5088
2N5089
−
300
900
400
1200
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
2N5088
2N5089
350
−
450
−
(IC = 10 mAdc, VCE = 5.0 Vdc) (Note 2)
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
Base −Emitter On Voltage
(IC = 10 mAdc, VCE = 5.0 Vdc) (Note 2)
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 500 mAdc, VCE = 5.0 Vdc, f = 20 MHz)
Collector−Base Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Emitter−Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Small−Signal Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
Noise Figure
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz)
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
2N5088
2N5089
300
−
400
−
VCE(sat)
−
0.5
Vdc
VBE(on)
−
0.8
Vdc
fT
Ccb
Ceb
hfe
2N5088
2N5089
NF
2N5088
2N5089
50
−
−
4.0
−
10
350
1400
450
1800
−
3.0
−
2.0
MHz
pF
pF
−
dB
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
http://onsemi.com
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