BC559 データシートの表示（PDF） - ON Semiconductor

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BC559

Low Noise Transistors

ON Semiconductor 

BC559, B, C BC560C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

ON CHARACTERISTICS

DC Current Gain

hFE

(IC = –10 µAdc, VCE = –5.0 Vdc)

BC559B

BC559C/560C

(IC = –2.0 mAdc, VCE = –5.0 Vdc)

BC559B

BC559C/560C

BC559

Collector–Emitter Saturation Voltage

(IC = –10 mAdc, IB = –0.5 mAdc)

(IC = –10 mAdc, IB = see note 1)

(IC = –100 mAdc, IB = –5.0 mAdc, see note 2)

Base–Emitter Saturation Voltage

(IC = –100 mAdc, IB = –5.0 mAdc)

Base–Emitter On Voltage

(IC = –10 µAdc, VCE = –5.0 Vdc)

(IC = –100 µAdc, VCE = –5.0 Vdc)

(IC = –2.0 mAdc, VCE = –5.0 Vdc)

SMALL–SIGNAL CHARACTERISTICS

VCE(sat)

VBE(sat)

VBE(on)

Current–Gain — Bandwidth Product

(IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz)

Collector–Base Capacitance

(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)

fT

Ccbo

Small–Signal Current Gain

hfe

(IC = –2.0 mAdc, VCE = –5.0 V, f = 1.0 kHz) BC559B

BC559C/BC560C

Noise Figure

(IC = –200 µAdc, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz)

NF1

(IC = –200 µAdc, VCE = –5.0 Vdc, RS = 100 kΩ, f = 1.0 kHz, ∆f = 200 kHz)

NF2

NOTES:

1. IB is value for which IC = –11 mA at VCE = –1.0 V.

2. Pulse test = 300 µs – Duty cycle = 2%.

Min

100

100

180

380

120

—

—

—

—

—

—

–0.55

—

—

240

450

—

—

Typ

150

270

290

500

—

–0.075

–0.3

–0.25

–1.1

–0.52

–0.55

–0.62

250

2.5

330

600

0.5

—

Max

—

—

460

800

800

–0.25

–0.6

—

—

—

—

–0.7

—

—

500

900

2.0

10

Unit

—

Vdc

Vdc

Vdc

MHz

pF

—

dB

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