IRL3202SPBF データシートの表示（PDF） - International Rectifier

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IRL3202SPBF

HEXFET® Power MOSFET

International Rectifier 

IRL3202SPbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

V(BR)DSS Drain-to-Source Breakdown Voltage

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

RDS(on)

VGS(th)

gfs

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Forward Transconductance

IDSS

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

LS

Internal Source Inductance

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Min. Typ. Max. Units

20 ––– ––– V

––– 0.029 ––– V/°C

––– ––– 0.019

––– ––– 0.016 Ω

0.70 ––– ––– V

28 ––– ––– S

––– ––– 25 µA

––– ––– 250

––– ––– 100 nA

––– ––– -100

––– ––– 43

––– ––– 12 nC

––– ––– 13

––– 9.8 –––

––– 100 ––– ns

––– 63 –––

––– 82 –––

––– 7.5 ––– nH

––– 2000 –––

––– 800 ––– pF

––– 290 –––

Conditions

VGS = 0V, ID = 250µA

Reference to 25°C, ID = 1mA…

VGS = 4.5V, ID = 29A „

VGS = 7.0V, ID = 29A „

VDS = VGS, ID = 250µA

VDS = 16V, ID = 29A…

VDS = 20V, VGS = 0V

VDS = 10V, VGS = 0V, TJ = 150°C

VGS = 10V

VGS = -10V

ID = 29A

VDS = 16V

VGS = 4.5V, See Fig. 6 „…

VDD = 10V

ID = 29A

RG = 9.5Ω, VGS = 4.5V

RD = 0.3Ω, „…

Between lead,

and center of die contact

VGS = 0V

VDS = 15V

ƒ = 1.0MHz, See Fig. 5…

Source-Drain Ratings and Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

I SM

Pulsed Source Current

(Body Diode) …

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ton

Forward Turn-On Time

Min. Typ. Max. Units

Conditions

MOSFET symbol

D

––– ––– 48

A showing the

integral reverse

G

––– ––– 190

p-n junction diode.

S

––– ––– 1.3 V TJ = 25°C, IS = 29A, VGS = 0V „

––– 68 100 ns TJ = 25°C, IF = 29A

––– 130 190 nC di/dt = 100A/µs „…

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature.

‚ Starting TJ = 25°C, L = 0.64mH

RG = 25Ω, IAS = 29A.

ƒ ISD ≤ 29A, di/dt ≤ 63A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

„ Pulse width ≤ 300µs; duty cycle ≤ 2%.

… Uses IRL3202 data and test conditions

** When mounted on FR-4 board using minimum recommended footprint.

For recommended footprint and soldering techniques refer to application note #AN-994.

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