IRF630 データシートの表示（PDF） - Nell Semiconductor Co., Ltd
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IRF630 Datasheet PDF : 7 Pages
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SEMICONDUCTOR
Fig.5 Typical capacitance vs. Drain-to-Source
voltage
1600
1200
VGS = 0V, f =1MHZ
Ciss = Cgs +Cgd (Cds = shorted )
Crss = Cgd
Coss = Cds +Cgd
Ciss
800
400
Coss
Crss
0
100
101
Drain-to-Source voltage , VDS (volts)
IRF630 Series RRooHHSS
Nell High Power Products
Fig.6 Typical gate charge vs. Gate-to-Source
voltage
101
150°C
25°C
100
VGS = 0V
0.5
0.7
0.9
1.1
1.3
1.5
Source-to-drain voltage, VSD (volts)
Fig.7 Typical gate charge vs. gate-to-source
voltage
20
lD = 5.9A
16
VDS = 160V
VDS = 100V
VDS = 40V
12
8
4
For test circuit
See figure 13
0
0
10
20
30
40
50
Total gate charge , QG (nC)
Fig.8 Maximum safe operating area
10³
Operation in This Area is Limited by RDS(ON)
10²
10µs
10
1
0.1
0.1
100µs
1ms
Note:
1. TC = 25°C
2. TJ = 150°C
3. Single Pulse
10ms
1
10
10²
10³
10⁴
Drain-to-Source voltage, VDS (volts)
Fig.9 Maximum drain current vs.
Case temperature
10
8
6
4
2
0
25
50
75
100
125
150
Case temperature, TC (°C)
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