IRFP254 データシートの表示（PDF） - Inchange Semiconductor

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IRFP254

N-Channel MOSFET Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc N-Channel MOSFET Transistor

isc Product Specification

IRFP254

FEATURES

·Drain Current –ID= 23A@ TC=25℃

·Drain Source Voltage-

: VDSS= 250V(Min)

·Static Drain-Source On-Resistance

: RDS(on) = 0.14Ω(Max)

·Fast Switching

DESCRIPTION

·Designed for use in switch mode power supplies and general

purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

VDSS

VGS

Drain-Source Voltage

Gate-Source Voltage-Continuous

250

V

±20

V

ID

Drain Current-Continuous

23

A

IDM

Drain Current-Single Pluse

92

A

PD

Total Dissipation @TC=25℃

180

W

TJ

Max. Operating Junction Temperature

-55~150 ℃

Tstg

Storage Temperature

-55~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c Thermal Resistance, Junction to Case

0.7

℃/W

Rth j-a Thermal Resistance, Junction to Ambient

30

℃/W

isc website：www.iscsemi.cn

1 isc & iscsemi is registered trademark

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