TR2106SY40 データシートの表示（PDF） - Transys Electronics Limited

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TR2106SY40

Rectifier Diode

Transys Electronics Limited 

TR2106SY

SURGE RATINGS

Symbol

Parameter

IFSM

Surge (non-repetitive) forward current

I2t

I2t for fusing

I

Surge (non-repetitive) forward current

FSM

I2t

I2t for fusing

Conditions

10ms half sine; Tcase = 150oC

VR = 50% VRRM - 1/4 sine

10ms half sine; Tcase =150oC

V =0

R

Max. Units

50.0

kA

12.5 x 106 A2s

62.5

kA

1.96 x 106 A2s

THERMAL AND MECHANICAL DATA

Symbol

Parameter

Rth(j-c)

Thermal resistance - junction to case

Rth(c-h)

Thermal resistance - case to heatsink

T

Virtual junction temperature

vj

T

Storage temperature range

stg

-

Clamping force

Conditions

Double side cooled

dc

Single side cooled

Anode dc

Cathode dc

Clamping force 43.0kN

with mounting compound

Double side

Single side

Forward (conducting)

Reverse (blocking)

Min. Max. Units

- 0.0095 oC/W

- 0.019 oC/W

- 0.019 oC/W

- 0.002 oC/W

-

0.004 oC/W

-

160

oC

-

150

oC

-55 150

oC

38.0 47.0 kN

CHARACTERISTICS

Symbol

Parameter

VFM

Forward voltage

IRRM

Peak reverse current

QS

Total stored charge

I

Peak recovery current

RR

VTO

Threshold voltage

r

Slope resistance

T

Conditions

At 3000A peak, Tcase = 25oC

At VRRM, Tcase = 150oC

IF = 2000A, dIRR/dt = 3A/m s

Tcase = 150C, V R = 100V

At Tvj = 150C

At T = 150C

vj

Min. Max. Units

-

1.15

V

-

250 mA

- 5000 m C

-

150

A

-

0.75 V

- 0.118 mW

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