NPN High Voltage Power Transistors
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
TIP47/48/49/50
Symbol
VCEO (SUS)
ICEO
ICES
IEBO
Description
Collector- Emitter Sustaining Voltage
TIP47
TIP48
TIP49
TIP50
Collector Cut-Off Current TIP47
TIP48
TIP49
TIP50
Collector Cut-Off Current TIP47
TIP48
TIP49
TIP50
Emitter Cut-Off Current
hFE
* DC Current Gain
VCE(sat) * Collector-Emitter Saturation Voltage
Min.
250
300
350
400
--
--
--
30
10
--
VBE(on) * Base-Emitter On Voltage
--
fT
Current Gain Bandwidth Product
10
tON
Turn ON Time
--
tSTG
Storage Time
--
tF
Fall Time
--
* Pulse Test: Pulse Width ≤300µs, duty Cycle ≤2%
Max. Unit
Conditions
--
V IC = 30mA; IB =0
1
VCE = 150V, IB = 0
1
1
mA
VCE = 200V, IB = 0
VCE = 250V, IB = 0
1
VCE = 300V, IB = 0
1
VCE = 350V, VBE = 0
1
1
mA
VCE = 400V, VBE = 0
VCE = 450V, VBE = 0
1
VCE = 500V, VBE = 0
1
mA VEB = 5V, IC = 0
150
VCE = 10V, IC = 0.3A
VCE = 10V, IC = 1A
1
V IC = 1A; IB = 0.2A
1.5
V VCE = 10V, IC = 1A
--
MHz VCE = 10V, IC = 0.2A, f=2MHz
0.5
µs
VCC = 400V,
3
µs 5 IB1 = -2.5 IB2 = IC = 6A
RL= 66.7Ω
0.3
µs
www.taitroncomponents.com
Rev. B/NX 2008-03-25
PaRgeev.2Ao/fW4W