BSP752T(2004) データシートの表示（PDF） - Infineon Technologies

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BSP752T
(Rev.:2004)

Smart Power High-Side-Switch

Infineon Technologies 

GND disconnect

Vbb VIN

Vbb

IN PROFET OUT

GND

VGND

GND disconnect with GND pull up

Vbb

IN PROFET OUT

GND

Vbb

VIN

VGND

BSP 752 T

Vbb disconnect with charged inductive

load

Vbb

high

IN PROFET OUT

GND

Vbb

Inductive Load switch-off energy

dissipation

E bb

=

E AS

Vbb

IN PROFET OUT

GND

{L

ZL

RL

ELoad

EL

ER

Energy stored in load inductance: EL = ½ * L * IL2

While demagnetizing load inductance,

the enérgy dissipated in PROFET is

EAS = Ebb + EL - ER = VON(CL) * iL(t) dt,

with an approximate solution for RL > 0Ω:

IL * L

IL * RL

EAS =

2*

RL

* (V bb + | V O U T ( C L )| ) * ln (1 +

)

| V OUT (CL )|

Page 8

2004-01-27

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