IXFE44N50Q データシートの表示（PDF） - IXYS CORPORATION
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IXFE44N50Q Datasheet PDF : 4 Pages
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Fig. 7. Input Adm ittance
60
54
48
42
36
30
24
TJ = 125ºC
18
25ºC
12
-40ºC
6
0
3.5
4
4.5
5
5.5
6
6.5
VG S - Volts
Fig. 9. Source Current vs. Source-To-
Drain Voltage
100
90
80
70
60
50
40
TJ = 125ºC
30
20
TJ = 25ºC
10
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
VS D - Volts
10000
Fig. 11. Capacitance
f = 1MHz
C is s
IXFE 44N50Q
IXFE 48N50Q
80
70
60
50
40
30
20
10
0
0
Fig. 8. Transconductance
TJ = -40ºC
25ºC
125ºC
6 12 18 24 30 36 42 48 54 60
I D - Amperes
10
9
8
7
6
5
4
3
2
1
0
0
Fig. 10. Gate Charge
VDS = 250V
ID = 24A
IG = 10mA
20 40 60 80 100 120 140 160 180 200
Q G - nanoCoulombs
Fig . 12. M axim u m T r an s ie n t T h e r m al
Re s is tan ce
1
1000
C os s
0.1
C rs s
100
0
5 10 15 20 25 30 35 40
VD S - Volts
0.01
1
10
100
Puls e W idth - millis ec onds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
1000
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