IXFE44N50Q データシートの表示（PDF） - IXYS CORPORATION
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IXFE44N50Q Datasheet PDF : 4 Pages
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Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 20 V; ID = IT, Notes 1, 2
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
RG = 4.7 Ω (External),
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
30 42
S
7000
pF
960
pF
230
pF
33
ns
22
ns
75
ns
10
ns
190
nC
40
nC
86
nC
0.31 K/W
0.07
K/W
IXFE 44N50Q
IXFE 48N50Q
ISOPLUS-227 B
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS
VGS = 0 V
ISM
Repetitive; pulse width limited by TJM
VSD
IF = IS, VGS = 0 V,
Note:1
48 A
192 A
1.5 V
trr
250 ns
QRM
IF = 25A, -di/dt = 100 A/µs, VR = 100 V
1.0
µC
IRM
10
A
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
2. IT Test current:
44N50Q: IT = 22A
48N50Q: IT = 24A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
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