MJ11032 データシートの表示（PDF） - Inchange Semiconductor
部品番号
コンポーネント説明
メーカー
MJ11032 Datasheet PDF : 2 Pages
| |||
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
MJ11032
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1A; IB= 0
120
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 25A; IB= 250mA
V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 50A; IB= 500mA
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 25A; IB= 250mA
VBE(sat)-2 Base-Emitter Saturation Voltage
ICER
Collector Cutoff Current
ICEO
Collector Cutoff Current
IC= 50A; IB= 500mA
VCE=120V; RBE=1kΩ
VCE=120V; RBE=1kΩ; TC=150℃
VCE= 50V; IB= 0
2.5
V
3.5
V
3.0
V
4.5
V
2.0
5.0
mA
2.0 mA
IEBO
Emitter Cutoff Current
hFE-1
DC Current Gain
hFE-2
DC Current Gain
VEB= 5V; IC= 0
IC= 25A, VCE= 5V
IC= 50A, VCE= 5V
1000
400
5.0 mA
18000
isc Website：www.iscsemi.cn
Share Link: 