MPSA42/43
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
MPSA42
MPSA43
VCBO
300
200
V
V
Collector-Emitter Voltage
MPSA42
MPSA43
VCEO
300
200
V
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
Ic
500
mA
Collector Dissipation (Ta=25℃)
SOT-89
Pc
TO-92
500
mW
625
mW
Junction Temperature
Storage Temperature
TJ
150
°C
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown
MPSA42
Voltage
MPSA43
Collector-Emitter Breakdown
MPSA42
Voltage
MPSA43
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
MPSA42
MPSA43
Emitter Cut-Off Current
MPSA42
MPSA43
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Collector Base Capacitance
MPSA42
MPSA43
SYMBOL TEST CONDITIONS
BVCBO Ic=100μA, IE=0
BVCEO Ic=1mA, IB=0
BVEBO
ICBO
IEBO
hFE
VCE(SAT)
VBE(SAT)
fT
Ccb
IE=100μA, Ic=0
VCB=200V, IE=0
VCB=160V, IE=0
VEB=6V, Ic=0
VEB=4V, Ic=0
VCE=10V, Ic=1mA
VCE=10V, Ic=10mA
VCE=10V, Ic=30mA
Ic=20mA, IB=2mA
Ic=20mA, IB=2mA
VCE=20V, Ic=10mA,
f=100MHz
VCB=20V, IE=0
f=1MHz
MIN TYP MAX UNIT
300
V
200
V
300
V
200
V
6
V
100 nA
100 nA
100 nA
100 nA
80
80
300
80
0.2 V
0.90 V
50
MHz
3
pF
4
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R208-034.C